TO-263 MOSFET 500V Vds 30V Vgs D2PAK Pack of 10 SIHB20N50E-GE3


TO-263 MOSFET 500V Vds 30V Vgs D2PAK Pack of 10 SIHB20N50E-GE3

Transistors TO-263 MOSFET 500V Vds 30V Vgs D2PAK Pack of 10 SIHB20N50E-GE3 tagestreff.de, Same day shipping Buy MOSFET 500V Vds 30V Vgs D2PAK (TO-263) Pack of 10 (SIHB20N50E-GE3): MOSFET - ✓ FREE DELIVERY possible on eligible purchases We provide a buyer protection guarantee., Enjoy flat-rate shipping on everyday. TO-263 MOSFET 500V Vds 30V Vgs D2PAK Pack of 10 SIHB20N50E-GE3 Fast shipping and low prices, TO-263 SIHB20N50E-GE3 fast worldwide delivery MOSFET 500V Vds 30V Vgs D2PAK Pack of 10 enjoy the cheap discounted prices..

Unit Weight: 0, Pd - Power Dissipation: 179 W, Pack of 10, Rise Time: 27 ns, Factory Pack Quantity: 1000, Product Category: MOSFET, MOSFET 500V Vds 30V Vgs D2PAK, Channel Mode: Enhancement, Height: 4, Product Type: MOSFET, SIHB20N50E-GE3, Configuration: Single, RoHS: Y, Manufacturer: Vishay, Vgs - Gate-Source Voltage: 30 V, Fall Time: 25 ns, Brand: / Siliconix, 67 mm, Mounting Style: SMD/SMT, Id - Continuous Drain Current: 19 A. : Industrial & Scientific, TO-263, Length: 10, : MOSFET - ✓ FREE DELIVERY possible on eligible purchases. Transistor Polarity: N-Channel. Subcategory: MOSFETs, Vgs th - Gate-Source Threshold Voltage: 4 V. Typical Turn-Off Delay Time: 48 ns, 83 mm, Width: 9, Technology: Si, Buy MOSFET 500V Vds 30V Vgs D2PAK. Package / Case: TO-263-3, TO-263, SIHB20N50E-GE3, Typical Turn-On Delay Time: 17 ns. Maximum Operating Temperature: + 150 C. Minimum Operating Temperature: - 55 C. 65 mm, Number of Channels: 1 Channel, Features:, Pack of 10, Rds On - Drain-Source Resistance: 184 mOhms. Qg - Gate Charge: 46 nC, 050717 oz, Vds - Drain-Source Breakdown Voltage: 550 V. Packaging: Bulk.

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TO-263 MOSFET 500V Vds 30V Vgs D2PAK Pack of 10 SIHB20N50E-GE3